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| FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor * High Voltage Capability * High Switching Speed * Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) * Base Current (DC) Base Current (Pulse) * TC = 25C unless otherwise noted Parameter Value 700 400 9 1.5 3 0.75 1.5 1.1 150 -65 ~ 150 Units V V V A A A A W C C Collector Power Dissipation (TC = 25C) Junction Temperature Storage Temperature * Pulse Test: Pulse Width = 5ms, Duty Cycle 10% (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJN3303 Rev. D FJN3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Conditions IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 500A, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125 Min. 700 400 9 Typ. Max Units V V V 10 10 14 5 23 0.5 1.0 3.0 1.0 1.2 4 1.1 4.0 0.7 A A V V V V V MHz s s s VBE(sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Thermal Characteristics Symbol RJC RJA TC = 25C unless otherwise noted Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Rating 48 125 Units C/W C/W FJN3303 Rev. D 2 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics Figure 1. Static Characteristic 1.6 1.4 100 Figure 2. DC Current Gain VCE = 2V Ta = 125 C o IC [A], COLLECTOR CURRENT Ta = 75 C o 1.0 0.8 hFE, DC CURRENT GAIN 1.2 IB = 120 mA Ta = - 25 C 10 o Ta = 25 C o IB = 40 mA 0.6 0.4 0.2 0.0 IB = 20 mA 0 1 2 3 4 5 6 7 8 9 10 1 1E-3 0.01 0.1 1 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 10 Figure 4. Base-Emitter Saturation Voltage 10 VCE(sat) [V], SATURATION VOLTAGE Ta = 25 C o 1 Ta = - 25 C o VBE(sat) [V], SATURATION VOLTAGE IC = 4 IB Ta = 125 C o Ta = 75 C o IC = 4 IB 1 Ta = - 25 C o Ta = 25 C o 0.1 Ta = 125 C o Ta = 75 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time 10 Figure 6. Resistive Load Switching Time 10 tSTG & tF [s], SWITCHING TIME tSTG 1 tSTG & tF [s], SWITCHING TIME tSTG 1 tF 0.1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT FJN3303 Rev. D 3 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Forward Biased Safe Operating Area 10 Figure 8. Reverse Biased Safe Operating Area 10 IC (DC) IC[A], COLLECTOR CURRENT 1 0.1 IC [A], COLLECTOR CURRENT 1 0.01 TC = 25 C Single Pulse 1E-3 0.1 1 10 100 1000 o IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.1 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating 1.4 PC [W], COLLECTOR POWER DISSIPATION 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 o 75 100 125 150 175 Ta [ C], AMBIENT TEMPERATURE FJN3303 Rev. D 4 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters FJN3303 Rev. D 5 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 6 FJN3303 Rev. D www.fairchildsemi.com |
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